Controlling the dopant profile for SRH suppression at low current densities in λ ≈ 1330 nm GaInAsP light-emitting diodes
نویسندگان
چکیده
منابع مشابه
AlN Õ AlGaInN superlattice light - emitting diodes at 280 nm
Ultraviolet light-emitting diodes operating at 280 nm, grown by gas source molecular-beam epitaxy with ammonia, are described. The device is composed of nand p-type superlattices of AlN~1.2 nm thick!/AlGaInN~0.5 nm thick! doped with Si and Mg, respectively. With these superlattices, and despite the high average Al content, we obtain hole concentrations of (0.7– 1.1)310 cm, with the mobility of ...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2020
ISSN: 0003-6951,1077-3118
DOI: 10.1063/5.0002058